Analysis of double heterojunction bipolar transistor with heavily doped p+-GaAs/InxGa1-xAs strained-layer superlattice base
✍ Scribed by Zheng Zeng; Ming Qi; Haitao Zhang; Jinsheng Luo
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 155 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
In this paper, the heavily carbon doped (\mathrm{GaAs} / \mathrm{In}{\mathbf{x}} \mathrm{Ga}{1-\mathbf{x}}) As strained-Layer superlattice (SLS) is proposed as a base material of a heterojunction bipolar transistor (HBT) to increase the hole concentration and decrease the interface defects. The static and transient characteristics of (\mathrm{GaAs} / \mathrm{SLS} / \mathrm{GaAs}) double heterojunction bipolar transistor (DHBT) are analyzed in detail using a numerical simulation method, and compared with AlGaAs/GaAs DHBT. The turn-on voltage of SLS DHBT is about (1.1 \mathrm{~V}, 0.3 \mathrm{~V}) lower than that of AlGaAs / GaAs DHBT. The cut-off frequency (f_{T}) and switching characteristics are higher than those of AlGaAs / GaAs DHBT. The analyses in this paper demonstrate that the (\mathrm{GaAs}) / SLS / GaAs DHBT is a potential novel device with favorable characteristics.