Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

✍ Scribed by Y.K. Chen; R. Kapre; W.T. Tsang; A. Tate; D.A. Humphrey; L. Fan

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 289 KB
• Volume: 136
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(94)90413-8