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An analysis of the anomalous dip in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs)

✍ Scribed by Hsing-Yuan Tu; Yo-Sheng Lin; Ping-Yu Chen; Shey-Shi Lu; Hsuan-Yu Pan

Book ID: 114616847
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 231 KB
Volume: 49
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.802658

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