Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs

✍ Scribed by Yo-Sheng Lin; Shey-Shi Lu

• Book ID: 102519060
• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 183 KB
• Volume: 36
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.10718

✦ Synopsis

Abstract

In this paper, a theory based on dual‐feedback circuit methodology is adopted to explain the anomalous dips of scattering parameter S~22~ in deep sub‐micrometer MOSFETs. It is found that the output impedance intrinsically behaves as a series RC circuit (for low substrate resistance) or a “shifted” series RC circuit (for very high substrate resistance) at low frequencies, and a parallel RC circuit at high frequencies. This inherent triple characteristic of the output impedance can cause two types of anomalous dips of S~22~ in a Smith chart. In this way, the two experimental results [1, 2], that is, the anomalous dips caused by high substrate resistance and high trans‐conductance (or wide gate‐width), can be explained simultaneously for the first time. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 193–200, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10718