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Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors

✍ Scribed by Chen, Y.K.; Kapre, R.; Tsang, W.T.; Wu, M.C.


Book ID
114534912
Publisher
IEEE
Year
1992
Tongue
English
Weight
137 KB
Volume
39
Category
Article
ISSN
0018-9383

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InGaP/GaAs heterojunction bipolar transi
✍ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec