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Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy

✍ Scribed by G. Mavrou; G. Vellianitis; G. Apostolopoulos; K. Argyropoulos; A. Dimoulas; R. Scholz

Book ID
108215007
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
144 KB
Volume
109
Category
Article
ISSN
0921-5107

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Epitaxy of Si nanocrystals by molecular
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(0 0 1)
✍ Hussein Mortada; Didier Dentel; Mickael Derivaz; Jean-Luc Bischoff; Emmanuel Den πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 738 KB

We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Γ‚ 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was