✦ LIBER ✦

Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy

✍ Scribed by M.N.K. Bhuiyan; A. Matsuda; T. Yasumura; T. Tambo; C. Tatsuyama

Book ID: 108418102
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 261 KB
Volume: 216
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(03)00452-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1)

Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy

✍ G. Mavrou; G. Vellianitis; G. Apostolopoulos; K. Argyropoulos; A. Dimoulas; R. S 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 144 KB

Epitaxial growth of NdF3:Er3+ film on Ca

Epitaxial growth of NdF3:Er3+ film on CaF2(1 1 1) substrate by molecular beam epitaxy

✍ J.M. Ko; Y. Terada; H.J. Ko; K. Shimamura; T. Yao; T. Fukuda 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 313 KB

Fabrication of as-grown MgB2 films on Zn

Fabrication of as-grown MgB2 films on ZnO (0 0 0 1) substrates by molecular beam epitaxy

✍ Y. Harada; T. Takahashi; M. Kuroha; H. Iriuda; Y. Nakanishi; F. Izumida; H. Endo 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 168 KB

The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt

Ultraviolet photodetectors with MgZnO na

Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(1 1 1) substrates

✍ Dayong Jiang; Jieming Qin; Xiyan Zhang; Zhaohui Bai; Dezhen Shen 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 527 KB

Single crystalline Tm2O3 films grown on

Single crystalline Tm2O3 films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy

✍ T. Ji; J. Cui; Z.B. Fang; T.X. Nie; Y.L. Fan; X.L. Li; Q. He; Z.M. Jiang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 770 KB

Epitaxy of Si nanocrystals by molecular

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(0 0 1)

✍ Hussein Mortada; Didier Dentel; Mickael Derivaz; Jean-Luc Bischoff; Emmanuel Den 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 738 KB

We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Â 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was