We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Γ 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was
Single crystalline Tm2O3 films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy
β Scribed by T. Ji; J. Cui; Z.B. Fang; T.X. Nie; Y.L. Fan; X.L. Li; Q. He; Z.M. Jiang
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 770 KB
- Volume
- 321
- Category
- Article
- ISSN
- 0022-0248
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