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Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces

โœ Scribed by Xiaochuan Zhou; Shan Jiang; Wiley P. Kirk


Book ID
108342358
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
684 KB
Volume
175-176
Category
Article
ISSN
0022-0248

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We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 ร‚ 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was