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Transient growth in molecular beam epitaxy of Si on Si(100) vicinal surfaces

✍ Scribed by T. Kawamura; M.R. Wilby


Publisher
Elsevier Science
Year
1993
Weight
69 KB
Volume
283
Category
Article
ISSN
0167-2584

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Kinetic energy enhanced molecular beam e
✍ Barbara J. Garrison; Mitchel T. Miller; Donald W. Brenner πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science 🌐 English βš– 338 KB

For kinetic energy enhanced molecular beam epitaxial growth of Si{ 100) we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These tutreconstructions occur on the femtosecond timescale rather than requiring the long times associated with su