Kinetic energy enhanced molecular beam epitaxial growth of Si{100}

✍ Scribed by Barbara J. Garrison; Mitchel T. Miller; Donald W. Brenner

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 338 KB
• Volume: 146
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(88)87500-6

✦ Synopsis

For kinetic energy enhanced molecular beam epitaxial growth of Si{ 100) we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These tutreconstructions occur on the femtosecond timescale rather than requiring the long times associated with surface diffusion processes. The optimal energy range appears to be 5-10 eV.