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The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature study

✍ Scribed by D.A. Woolf; D.I. Westwood; R.H. Williams

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 662 KB
Volume: 108
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90349-a

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