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Molecular beam epitaxial growth of Si/GeSi ridge structure

✍ Scribed by L.W. Guo; H. Chen; J.M. Zhou; Q. Huang


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
572 KB
Volume
153
Category
Article
ISSN
0022-0248

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For kinetic energy enhanced molecular beam epitaxial growth of Si{ 100) we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These tutreconstructions occur on the femtosecond timescale rather than requiring the long times associated with su