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Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layers

✍ Scribed by D.J. Gravesteijn; P.C. Zalm; G.F.A. van de Walle; C.J. Vriezema; A.A. van Gorkum; L.J. van Ijzendoorn

No coin nor oath required. For personal study only.

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