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Selective growth of InSb on localized area of Si(1 0 0) by molecular beam epitaxy

โœ Scribed by Shinsuke Hara; Tomoaki Iida; Yuichi Nishino; Akinori Uchida; Hiroyuki Horii; Hiroki I. Fujishiro


Book ID
108166273
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
886 KB
Volume
323
Category
Article
ISSN
0022-0248

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Epitaxy of Si nanocrystals by molecular
โœ Hussein Mortada; Didier Dentel; Mickael Derivaz; Jean-Luc Bischoff; Emmanuel Den ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 738 KB

We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 ร‚ 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was