𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface

✍ Scribed by S Spiga; C Wiemer; G Tallarida; M Fanciulli; M Malvestuto; F Boscherini; F D’Acapito; A Dimoulas; G Vellianitis; G Mavrou

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
346 KB
Volume
109
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The Pr2O3/Si(0 0 1) interface
The Pr2O3/Si(0 0 1) interface
✍ Dieter Schmeißer 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 525 KB

Praseodymium sequioxide (Pr 2 O 3 ) is among the most promising hetero-oxides which are treated as candidates of choice to replace SiO 2 as the gate dielectric material for sub-0.1mm CMOS technology. However, in order to enable the process integration the hetero-oxides require substantial characteri

Improvement of Y2O3/Si interface for FeR
Improvement of Y2O3/Si interface for FeRAM application
✍ D Ito; T Yoshimura; N Fujimura; T Ito 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 177 KB

We attempted to improve the dielectric properties of sputter deposited Y O thin film on Si for the buffer layer of 2 3 ## Ž . Ferroelectric Random Access Memory FeRAM application. Although the use of Xe as a sputtering gas was effective to improve the crystallinity of Y O film on Si compared to t