Improvement of Y2O3/Si interface for FeRAM application

✍ Scribed by D Ito; T Yoshimura; N Fujimura; T Ito

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 177 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00085-4

✦ Synopsis

We attempted to improve the dielectric properties of sputter deposited Y O thin film on Si for the buffer layer of 2 3

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. Ferroelectric Random Access Memory FeRAM application. Although the use of Xe as a sputtering gas was effective to improve the crystallinity of Y O film on Si compared to that of the film deposited using Ar gas, oxygen deficiency in the 2 3 film was enhanced by use of Xe gas. Increasing the total sputtering gas pressure was effective for improving the oxygen deficiency. The Y O film sputtered at the total gas pressure of 20 mTorr has little positive charges and shows excellent 2 3 dielectric properties as insulator. Effect of the substrate cleaning was also studied for decreasing the interface state density and the shift of flat band voltage.