Effects of In2O3 deposition conditions on the SiO2-Si interface
β Scribed by M. Suleman; S. Naseem
- Publisher
- Elsevier Science
- Year
- 1988
- Weight
- 105 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0379-6787
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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp
K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 liP b centers (\*Si = Si~ defects with unpaired sp ~ hybrid ]] [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO= interface. This has been enabled by the perfectly reversible H= passivation o