Reversible H2 passivation of ∗Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

✍ Scribed by A. Stesmans; G. Van Gorp

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 365 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90167-d

✦ Synopsis

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 liP b centers (*Si = Si~ defects with unpaired sp ~ hybrid ]] [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO= interface. This has been enabled by the perfectly reversible H= passivation of Pb, which affects the defect's spin state. Sequential hydrogenation at 253-353°C and degassing treatments in high vacuum at 743-835°C allowed to vary the Pt~ density in the range 5 × 1()~'< [Pb] ~< (1.14 -+ 0.06) x 10 ~ cm -'. With increasing [Ph] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO z interfaces, dry thermally grown at ~920°C, naturally comprise a *Si Si, defect density passivated or not -of 1.14 x 1() ~ cm -~.