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Electron density profile at the interface of SiO2/Si(0 0 1)

✍ Scribed by S. Banerjee; S. Ferrari; R. Piagge; S. Spadoni


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
325 KB
Volume
253
Category
Article
ISSN
0169-4332

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The previously suggested segregation model for arsenic at Si/SiO 2 interfaces based on a combined trapping/pairing model [J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M.J. Caldas, Phys. Rev. B 65 ( 2002) 245305] requires high binding energies for interface vacancies, which our results of ∼