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Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface by Auger electron spectroscopy

✍ Scribed by T. Yakabe; D. Fujita; K. Yoshihara


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
100 KB
Volume
241
Category
Article
ISSN
0169-4332

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We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar + ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) sur