The effect of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface

✍ Scribed by K.R. Roos; J. Lozano; J.H. Craig Jr.

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 457 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2007.08.023

✦ Synopsis

We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar + ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 Â 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface.