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Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma

✍ Scribed by Masaki Mori; Takuya Seino; Daisuke Muto; Masao Sakuraba; Junichi Murota


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
210 KB
Volume
8
Category
Article
ISSN
1369-8001

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MBE growth and characterization of GaAs1
✍ T. Toda; F. Nishino; A. Kato; T. Kambayashi; Y. Jinbo; N. Uchitomi πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 217 KB

We investigated the growth of GaAs 1Γ€x Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM