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Growth mechanisms for wire-like epitaxial gold silicide islands on Si(1 1 0) surfaces

✍ Scribed by R. Batabyal; S. Patra; A. Roy; B.N. Dev


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
545 KB
Volume
257
Category
Article
ISSN
0169-4332

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We investigated the growth of GaAs 1Γ€x Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM