✦ LIBER ✦

Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO[sub 2]

✍ Scribed by Stesmans, A.; Afanasâev, V. V.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical Evaluation of Defects at the

✍ O’Sullivan, B. J.; Hurley, P. K.; O’Connor, E.; Modreanu, M.; Roussel, H.; Jimen 📂 Article 📅 2004 🏛 The Electrochemical Society 🌐 English ⚖ 177 KB

Identification of sub-band-gap absorptio

✍ Price, J.; Lysaght, P. S.; Song, S. C.; Li, Hong-Jyh; Diebold, A. C. 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 451 KB

First-principles study of the electronic

✍ Houssa, M.; Afanasâev, V. V.; Stesmans, A.; Pourtois, G.; Meuris, M.; Heyns, M 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 347 KB

Dependence of strain at the (111)Si/SiO2

✍ B Nouwen; A Stesmans 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 111 KB

Electronic properties of Ge dangling bon

✍ Afanasâev, V. V.; Houssa, M.; Stesmans, A.; Souriau, L.; Loo, R.; Meuris, M. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 382 KB

Ab initio modeling of structure and defe

✍ J.L. Gavartin; L. Fonseca; G. Bersuker; A.L Shluger 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 173 KB