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Ab initio modeling of structure and defects at the HfO2/Si interface

✍ Scribed by J.L. Gavartin; L. Fonseca; G. Bersuker; A.L Shluger

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 173 KB
Volume: 80
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.04.097

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