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Ab-Initio Modeling of Boron and Oxygen Diffusion in Polycrystalline HfO2 Films

✍ Scribed by Chun-Li Liu

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
200 KB
Volume
233
Category
Article
ISSN
0370-1972

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✦ Synopsis

We present ab-initio modeling results including formation, migration, and activation energies for B and O diffusion through bulk and grain boundaries in polycrystalline HfO 2 films. Modeling results clearly indicate that B and O can penetrate through a 40 A HfO 2 film via grain boundary diffusion, but not by bulk diffusion. SIMS analysis of B concentration profiles for polysilicon/HfO 2 /Si gate stacks after different anneals showed double B peaks at the interfaces and thus confirmed the modeling prediction.

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