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Electronic properties of Ge dangling bond centers at Si[sub 1âx]Ge[sub x]/SiO[sub 2] interfaces

✍ Scribed by Afanasâev, V. V.; Houssa, M.; Stesmans, A.; Souriau, L.; Loo, R.; Meuris, M.

No coin nor oath required. For personal study only.

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Electronic properties of Ge dangling bond centers at Si[sub 1âx]Ge[sub x]/SiO[sub 2] interfaces