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First-principles study of the electronic properties of Ge dangling bonds at (100)Si[sub 1âx]Ge[sub x]/SiO[sub 2] interfaces

✍ Scribed by Houssa, M.; Afanasâev, V. V.; Stesmans, A.; Pourtois, G.; Meuris, M.; Heyns, M. M.

No coin nor oath required. For personal study only.

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