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Shallow P+-junction technology for 0.25 μm CMOS

✍ Scribed by H. Pomp; P.H. Woerlee; A.J. Walker


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
230 KB
Volume
19
Category
Article
ISSN
0167-9317

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Design of LNA at 2.4 GHz using 0.25 μm C
✍ Xiaomin Yang; Thomas X. Wu; John McMacken 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 192 KB

## Abstract Two 2.4‐GHz fully integrated CMOS low‐noise amplifiers (LNA) have been designed in a 0.25‐μm CMOS process. Design procedure and simulation results are presented in this paper. In the design of differential LNA, a novel idea is proposed so that the die area can be greatly reduced. © 2003