design of multiband antennas using a single radiator. The theoretical prediction of antenna resonances can be achieved based on an effective medium model. Theoretical results have been verified via numerical simulations and measurements, which are all in good agreement. Further works include the imp
Design of LNA at 2.4 GHz using 0.25 μm CMOS technology
✍ Scribed by Xiaomin Yang; Thomas X. Wu; John McMacken
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 192 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Two 2.4‐GHz fully integrated CMOS low‐noise amplifiers (LNA) have been designed in a 0.25‐μm CMOS process. Design procedure and simulation results are presented in this paper. In the design of differential LNA, a novel idea is proposed so that the die area can be greatly reduced. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 270–275, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10740
📜 SIMILAR VOLUMES
## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out
## Abstract In this article, we demonstrate a miniature low‐insertion‐loss 60‐GHz‐band bandpass filter by standard 0.13 μm CMOS technology. Low‐insertion‐loss is achieved by adopting thick microstrip‐line (MSL) with optimized ground‐plane pattern as the needed inductors to minimize the metal and su
to increase the illumination towards the edges of the aperture. This would account for the difference between the measured radiation pattern and the calculated optimal value, also shown in Figure 4. ## 5. Discussion The measured radiation pattern shows that the incorporation of the lens has a dram
This paper presents the design of high-voltage NMOS and PMOS devices with shallow trench isolation (STI) in standard 0.25 mm/5 V CMOS technology. Breakdown voltages of 20 V for n-channel device with a specific on resistance of 1.06 mO cm 2 and À20 V for p-channel device with a specific on resistance
## Abstract A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35‐μm silicon germanium bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. Thi