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Design of a 3–5-GHz ultrawideband BiFET mixer using 0.35-μm SiGE BiCMOS technology

✍ Scribed by Song Ruifeng; Liao Huailin; Huang Ru; Wang Yangyuan

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
361 KB
Volume
49
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35‐μm silicon germanium bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. This presented BiFET mixer using bipolar junction transistor as the transconductor stage and metal oxide semiconductor field effect transistor as the switch stage to achieve noise power and linearity trade‐off. This 3–5‐GHz UWB mixer achieves a conversion gain of 4.5 ± 0.5 dB at the designed band. The mixer core draws a current of 2.5 mA from a supply voltage of 3 V, while consumes chip area of 0.9 × 0.9 mm^2^. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 965–968, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22305

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