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Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

✍ Scribed by Hu, W. D.; Chen, X. S.; Quan, Z. J.; Xia, C. S.; Lu, W.; Ye, P. D.

Book ID: 118273245
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 828 KB
Volume: 100
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2354327

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