Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect

✍ Scribed by Hu, W. D.; Chen, X. S.; Quan, Z. J.; Xia, C. S.; Lu, W.; Yuan, H. J.

• Book ID: 121732052
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 383 KB
• Volume: 89
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2405416