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Self-consistent simulation of modulation-doped field-effect transistors

✍ Scribed by Y.H. Wang; M.P. Houng; C.H. Chu; H.H. Chen

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
375 KB
Volume
37
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Self-consistent modeling ofC–Vand electr
Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors
✍ J.E. Manzoli; M.A. Romero; O. HipΓ³lito πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 68 KB

A self-consistent solution of SchrΓΆdinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulationdoped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the pos