Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors
✍ Scribed by J. Zhang; N.C. Tien; E.W. Lin; H.H. Wieder; W.H. Ku; C.W. Tu; D.B. Poker; S.N.G. Chu
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 856 KB
- Volume
- 196
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
ᎏdynamic, DC, and OIL chirp. By numerically analyzing the rate equations for the injection-locked laser, it is shown that the OIL chirp is compatible to the DC and dynamic chirp, but different in sign. Hence, a considerable reduction in frequency chirp can be achieved by the OIL. REFERENCES 1. C. Li
A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el
An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is estab