Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies

✍ Scribed by W. Klein; G. Böhm; H. Heiss; S. Kraus; D. Xu; R. Semerad; G. Tränkle; G. Weimann

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 337 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80139-4