✦ LIBER ✦

Optical effects in modulation-doped-field-effect-transistor

✍ Scribed by A. Singhal; A. Mishra; P. Chakrabarti

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 226 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90103-l

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Self-consistent simulation of modulation

Self-consistent simulation of modulation-doped field-effect transistors

✍ Y.H. Wang; M.P. Houng; C.H. Chu; H.H. Chen 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 375 KB

Low-temperature degradation studies of A

Low-temperature degradation studies of AlGaAs/GaAs modulation-doped field effect transistors

✍ Soon-won Kang; Joseph Ya-min Lee 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 354 KB

Persistent photoconductivity in AlGaAs/G

Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review

✍ Marshall I. Nathan 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 687 KB

Modeling of parabolic quantum well wire

Modeling of parabolic quantum well wire channels for modulation-doped field-effect transistors

✍ S.K. Islam; F.C. Jain 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 328 KB

Molecular beam epitaxial growth and char

Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

✍ J. Zhang; N.C. Tien; E.W. Lin; H.H. Wieder; W.H. Ku; C.W. Tu; D.B. Poker; S.N.G. 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 856 KB

Electrochemical Interface Doping in Orga

Electrochemical Interface Doping in Organic Light Emitting Field Effect Transistors

✍ A. Hepp; H. Heil; R. Schmechel; H. von Seggern 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 219 KB 👁 2 views

Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide