Electrochemical Interface Doping in Organic Light Emitting Field Effect Transistors

✍ Scribed by A. Hepp; H. Heil; R. Schmechel; H. von Seggern

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 219 KB
• Volume: 7
• Category: Article
• ISSN: 1438-1656
• DOI: 10.1002/adem.200500118

✦ Synopsis

Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide and the tetracene layer. For the first time a polymeric electrolyte is combined with “small molecule” functional material. The injection of both, holes and electrons allows for radiative recombination in the transistor channel. The onset of light emission occurs at a source‐drain‐voltage below 10 V and can be controlled by the gate voltage.