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Near-Infrared Light-Emitting Ambipolar Organic Field-Effect Transistors

✍ Scribed by E. C. P. Smits; S. Setayesh; T. D. Anthopoulos; M. Buechel; W. Nijssen; R. Coehoorn; P. W. M. Blom; B. de Boer; D. M. de Leeuw


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
349 KB
Volume
19
Category
Article
ISSN
0935-9648

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Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide