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Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

✍ Scribed by M. Passlack; J. Abrokwah; R. Droopad; Zhiyi Yu; C. Overgaard; Sang In Yi; M. Hale; J. Sexton; A. Kummel


Book ID
126603647
Publisher
IEEE
Year
2002
Tongue
English
Weight
246 KB
Volume
23
Category
Article
ISSN
0741-3106

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Investigation of self-aligned p++-GaAs/n
✍ W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y.-J. Yang πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 206 KB

p ++ -GaAs=n-InGaP heterojunction ΓΏeld-e ect transistors (HJFETs) with a highly carbon-doped gate and a wide-gap channel were reported. A self-aligned T-shaped gate HJFET exhibits a gate of 0:6 m in length by depositing gate metal of 1:0 m. DC characteristics including a turn-on voltage of 2:0 V at