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Anisotype-gate self-aligned p-channel heterostructure field-effect transistors

✍ Scribed by Abrokwah, J.K.; Huang, J.-H.; Ooms, W.J.; Hallmark, J.A.


Book ID
114534979
Publisher
IEEE
Year
1993
Tongue
English
Weight
752 KB
Volume
40
Category
Article
ISSN
0018-9383

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Investigation of self-aligned p++-GaAs/n
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p ++ -GaAs=n-InGaP heterojunction ΓΏeld-e ect transistors (HJFETs) with a highly carbon-doped gate and a wide-gap channel were reported. A self-aligned T-shaped gate HJFET exhibits a gate of 0:6 m in length by depositing gate metal of 1:0 m. DC characteristics including a turn-on voltage of 2:0 V at