Investigation of self-aligned p++-GaAs/n-InGaP heterojunction field-effect transistors

✍ Scribed by W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y.-J. Yang

• Book ID: 104427982
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 206 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00238-2

✦ Synopsis

p ++ -GaAs=n-InGaP heterojunction ÿeld-e ect transistors (HJFETs) with a highly carbon-doped gate and a wide-gap channel were reported. A self-aligned T-shaped gate HJFET exhibits a gate of 0:6 m in length by depositing gate metal of 1:0 m. DC characteristics including a turn-on voltage of 2:0 V at 1 mA=mm, a gate-drain breakdown voltage up to 30 V, a drain-source breakdown voltage exceeding 25 V, a maximum available transconductance of 160 mS=mm and AC performances such as a unit-current gain frequency of 16:8 GHz, and a unit-power gain frequency of 25 GHz were obtained for a non-self-aligned HJFET. With a self-aligned processing structure, the transconductance and fmax were improved to 230 mS=mm and 35 GHz, respectively.