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Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

✍ Scribed by Jung-Hui Tsai; Tzu-Yen Weng; King-Poul Zhu


Book ID
108268948
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
657 KB
Volume
43
Category
Article
ISSN
0749-6036

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