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Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

✍ Scribed by Jung-Hui Tsai; Der-Feng Guo; Wen-Shiung Lour


Book ID
111445035
Publisher
Springer
Year
2011
Tongue
English
Weight
163 KB
Volume
45
Category
Article
ISSN
1063-7826

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✍ Ching-Sung Lee; Wei-Chou Hsu πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have