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Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

✍ Scribed by Hung-Ming Chuang; Shiou-Ying Cheng; Chun-Yuan Chen; Xin-Da Liao; Rong-Chau Liu; Wen-Chau Liu

Book ID
114617178
Publisher
IEEE
Year
2003
Tongue
English
Weight
574 KB
Volume
50
Category
Article
ISSN
0018-9383

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Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors
✍ Ching-Sung Lee; Wei-Chou Hsu πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have