✦ LIBER ✦

Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates

✍ Scribed by J.C. Sarace; R.E. Kerwin; D.L. Klein; R. Edwards

Book ID: 107855836
Publisher: Elsevier Science
Year: 1968
Tongue: English
Weight: 924 KB
Volume: 11
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(68)90067-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Planar silicon field-effect transistors

Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators

✍ C.D. Fung; G.L. Larkins 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 475 KB

Mobility Improvement and Microwave Chara

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

✍ Habibpour, O.; Cherednichenko, S.; Vukusic, J.; Stake, J. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 331 KB

Self-aligned inversion n-channel In0.2Ga

Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric

✍ C.P. Chen; T.D. Lin; Y.J. Lee; Y.C. Chang; M. Hong; J. Kwo 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 623 KB

Performance stability of high-power III-

Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors

✍ S. Saygi; H. Fatima; X. He; S. Rai; A. Koudymov; V. Adivarahan; J. Yang; G. Simi 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 97 KB

Silicon and gallium arsenide field-effec

Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

✍ H. Statz; W.v. Münch 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 494 KB

Metal-oxide-semiconductor field effect t

Metal-oxide-semiconductor field effect transistor using ‘oxidizedμc-Si/ultrathin oxide’ gate structure

✍ Seung Jae Baik; Jae Hyung Choi; Jeong Yong Lee; Koeng Su Lim 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 690 KB

The metal-oxide-semiconductor (MOS) field effect transistor (FET) using 'oxidized µc-Si/ultrathin oxide' gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immedia