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Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

✍ Scribed by H. Statz; W.v. Münch

Publisher: Elsevier Science
Year: 1969
Tongue: English
Weight: 494 KB
Volume: 12
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(69)90119-1

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