Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate: H. Statz and ü, Solid-St. Electron.12 (1969), p. 111

• Publisher: Elsevier Science
• Year: 1969
• Tongue: English
• Weight: 95 KB
• Volume: 8
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(69)90360-6