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Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators

✍ Scribed by C.D. Fung; G.L. Larkins


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
475 KB
Volume
132
Category
Article
ISSN
0040-6090

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## NItrate-sensltlve Ion-sensltlve field effect transistors (ISFETs) were prepared by chemical graftmg of the slhca gate msulator surface A dlfferentlal measurement mode between a reference ISFET with an Ion-msensltlve surface and an ISFET was used The msensltlve layer was prepared by graftmg 3-ch